A series of unprecedented boron-doped PAs (B-PAs), including B-[4,2]PA, B-[4,3]PA and B-[7,2]PA derivatives, are synthesized by a novel one-pot modular synthetic strategy through efficient intramolecular electrophilic borylation. Their chemical structures are unequivocally confirmed with a combination of mass spectrometry, NMR, and single-crystal X-ray diffraction analysis. Notably, B-[4,3]PA exhibits an almost planar geometry, whereas B-[4,2]PA displays a distinctive bowl-like distortion. Furthermore, the optoelectronic properties of this series of B-PAs are thoroughly investigated by UV/Vis absorption and fluorescence spectroscopy combined with DFT calculation. Compared with their parent all carbon analogs, the obtained B-PAs exhibit high stability, wide energy gaps, and high photoluminescence quantum yields of up to 84%. This study reveals the exceptional ability of boron doping to finely tune the physicochemical properties of PAs, showcasing their potential applications in optoelectronics.

原文链接：https://onlinelibrary.wiley.com/doi/epdf/10.1002/anie.202312055