The fabrication of high-performance nonvolatile organic field effect transistor (OFET) memory devices is reported using a series of pyrene-fused pyrazaacene (PPA) and 9,10-imide-pyrene-fused pyrazaacene (IPPA) derivatives as n-type doping components. The obtained memory devices exhibit stable switching behaviors (>100 times) and good retention properties (>104 s). Devices based on chlorinated IPPA (IPPA-Cl) show the largest memory window of 40.8 V, with a trapping charge density of 2.66 × 1012 cm−2 and on/off ratio higher than 106. Our investigation reveals that low-lying lowest unoccupied molecular orbital energy levels and small dipole moment are key parameters for achieving high memory performance. This work provides a general guideline for the design of n-type organic semiconductors as highly efficient doping materials for organic memory devices.

原文链接：https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.201800598